Advanced Flip Chip Packaging by Robert Lanzone (auth.), Ho-Ming Tong, Yi-Shao Lai, C.P. Wong

By Robert Lanzone (auth.), Ho-Ming Tong, Yi-Shao Lai, C.P. Wong (eds.)

Advanced turn Chip Packaging provides prior, current and destiny advances and tendencies in parts akin to substrate expertise, fabric improvement, and meeting tactics. turn chip packaging is now in frequent use in computing, communications, customer and automobile electronics, and the call for for turn chip expertise is continuous to develop in an effort to meet the necessity for items that supply greater functionality, are smaller, and are environmentally sustainable.

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1 Materials and Processes for Bumping Technology Metals for Wafer Bumping A bump formed in most cases on wafer level is defined as a usually conducting 3D interconnect element between die and substrate [8].

Cole M et al (2008) European Union RoHS exemption review case study. IBM Corporation 9. Technology Forecasters Inc. (2008) Report on Economic impact of the European Union RoHS Directive on The Electronic Industry, Jan 2008 10. Luijk P, et al (1991) Thermal degradation characteristics of high impact olystyrene/ decabromodiphenylether/antimony oxide studied by derivative thermogravimetry and temperature resolved pyrolysis-mass spectrometry: formation of polybrominated dibenzofurans, antimony (oxy)bromides and brominated styrene oligomers, J Appl Pyrolysis 20, 303–319 2 Technology Trends: Past, Present, and Future 51 11.

However, due to this limit on the maximum bonding temperature, a transient liquid phase (TLP) bonding is used, instead. 5 %Ag) is used as the interconnection metal. The joining occurs at the solder melting temperature, with all the Sn converted to intermetallic, which has a 2 Technology Trends: Past, Present, and Future a 49 d Si Cu TV UBM TV TEG#2 Cu Post Cu bump 50um Gap Solder SiN TV TEG#1 Exposed Cu TV COMPO b Resin ε-Cu3Sn X6,000 SiO2 1 mm c 10 μm 13 μm Eutectic SnPb Sn-Cu Fig. 25 Various fine pitch interconnects; (a) IBM’s <70 mm pitch MPC-C2 process, (b) and (c) IBM 50 mm pitch report, and (d) ASAT 20 mm pitch TLP joining much higher melting temperature, and can withstand the higher temperature needed for thermally decomposing the temporary adhesive.

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