By Kenneth L. Ashley

Booklet through Ashley, Kenneth L.

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**Sample text**

Here it serves as a basis for discussing the dc SPICE parameters of the MOSFET transistor. In the example, VDS = VDD. The output characteristic is a plot of ID versus VDS for VGS = const. A representative example is shown in Fig. 3. As mentioned, the low-voltage region is referred to as the linear region, triode region, or presaturation region. Outside this region for higher voltages is the active (saturation) region. This is referred to here as the active region to avoid confusion with the fact that the nomenclature is just the opposite in the case of the BJT; that is, the low-voltage region is called the saturation region.

In the MOSFET parameter-determination experiments of Projects 3 and 4, we plot VGS versus for the transistor biased into the active region. 12) is and the zero intercept is expected to be Vtno. LabVIEW obtains the slope and intercept from a straight-line fit to the data. The measured transfer characteristic thus yields the two parameters and Vtno. In Project 4, parameter λn is obtained from finding based on at two different VDS values. 13 where the values are measured and λn is the only unknown.

With this condition not satisfied, an output signal is distorted. 10 In the parabolic relationship, the squared terms cancel entirely. In general, though, the output signal contains harmonic content (distortion) when Vgs is too large compared to Veffn. 2. Nonlinearity Referred to the Output The discussion above of limits imposed on Vgs assumes that the transistor remains in the active mode. To clarify this point, reference is made to the output characteristics of Fig. 5. The graph has plots of the output characteristic for three values of vGS in addition to the load line.