Compound Semiconductor Devices: Structures and Processing by Kenneth A. Jackson

By Kenneth A. Jackson

Compound Semiconductor units presents a accomplished perception into latest usual applied sciences, protecting the enormous diversity of semiconductor items and their attainable functions. The fabrics lined runs from the fundamentals of traditional semiconductor know-how via standard,power and opto semiconductors, to hugely advanced thoughts and microcontrollers and the specific units and modules for smartcards, car electronics, patron electronics and telecommunications. a few chapters are dedicated to the construction of semiconductor parts and their use in digital platforms in addition to to caliber administration. The ebook deals scholars and clients a special review of know-how, structure and parts of software of semiconductor items.

Show description

Read Online or Download Compound Semiconductor Devices: Structures and Processing PDF

Best electrical & electronic engineering books

Antenna Handbook - Applications

Quantity 1: Antenna basics and Mathematical innovations opens with a dialogue of the basics and mathematical recommendations for any type of paintings with antennas, together with uncomplicated rules, theorems, and formulation, and methods. DLC: Antennas (Electronics)

Applied Optimal Control: Optimization, Estimation and Control

This best-selling textual content specializes in the research and layout of complex dynamics structures. selection referred to as it “a high-level, concise ebook that may good be used as a reference by way of engineers, utilized mathematicians, and undergraduates. The layout is nice, the presentation transparent, the diagrams instructive, the examples and difficulties helpful…References and a multiple-choice exam are integrated.

Probability, Random Variables and Random Signal Principles (McGraw-Hill series in electrical engineering)

This very winning concise advent to chance conception for the junior-senior point path in electric engineering bargains a cautious, logical association which stresses basics and comprises over 800 pupil routines and ample useful functions (discussions of noise figures and noise temperatures) for engineers to appreciate noise and random indications in structures.

Extra info for Compound Semiconductor Devices: Structures and Processing

Sample text

Carbon was not listed in most purchasing specifications. The common requirement of trichlorosilane for organosilicon and semiconductor use has already been noted in Sec. 2, and many of the world’s polysilicon plants are cosited with, or close to a silicones plant. Thus, when in mid 1975, accidentally and undetected, a quantity of high-carbon float zone silicon reached device lines, serious yield problems were met in rectifier, thyristor, and power transistor manufacture. Subsequent research showed that, while not affecting the breakdown voltage, lower levels of carbon still degrade the reverse leakage, as is shown in the plot of Fig.

This combination of very heavy doping and oxygen control in large diameter crystals poses further technological problems. 6 Slice Fabrication Stated simply, the polished slice fed into a device line must be flat, clean, and damage free; but often in the past, companies, after achieving good bulk crystal, have failed to produce acceptable slice products. The steps used in wafer processing hide many pitfalls. In the slicing and grinding stages much damage is caused to the surface of the material, whether or not the shape be correct, and both have to be controlled.

1 kcal mol-l or 50 J mol-I), released at the interface, is a significant heat source. As the pull rate increases the interface curvature changes from convex (into the melt), 27 to concave (back into the crystal). Silicon crystallizes in the diamond-cubic lattice, with the (111) planes being the most densely packed, while the bonding between adjacent ( I l l ) planes is relatively weak compared to other directions. Growth is fast along the (111) planes, so leading to the appearance of { 111) facets on crystals, but slow perpendicular, while cleavage, twinning, and dislocation generation and propagation all occur along this dominant basal plane (Ellis and Treuting, 1951; Townley, 1973).

Download PDF sample

Rated 4.84 of 5 – based on 17 votes